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Archaeology International
Architecture_MPS
Europe and the World: A law review
Film Education Journal
History Education Research Journal
International Journal of Development Education and Global Learning
International Journal of Social Pedagogy
Jewish Historical Studies: A Journal of English-Speaking Jewry
Journal of Bentham Studies
London Review of Education
Radical Americas
Research for All
The Journal of the Sylvia Townsend Warner Society
The London Journal of Canadian Studies
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About UCL Press
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Heteroepitaxy of Semiconductors
2 Properties of Semiconductors
monograph
Publication date
(Online):
October 12 2016
Publisher:
CRC Press
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Toshio Matsushita
,
Shuji Nakamura
,
Masayuki Senoh
…
(1996)
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Die Konstitution der Mischkristalle und die Raumf�llung der Atome
L. Vegard
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
D. Steigerwald
,
F. Ponce
,
S. D. Lester
…
(1995)
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Author and book information
Book Chapter
Publication date (Print):
September 15 2016
Publication date (Online):
October 12 2016
Pages
: 7-100
DOI:
10.1201/9781315372440-3
SO-VID:
3b1e94df-9feb-42b1-a58d-c54820473f7e
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Book chapters
pp. 1
1 Introduction
pp. 7
2 Properties of Semiconductors
pp. 101
3 Heteroepitaxial Growth
pp. 131
4 Surface and Chemical Considerations in Heteroepitaxy
pp. 181
5 Mismatched Heteroepitaxial Growth and Strain Relaxation
pp. 611
Appendix VI Crystallographic Etches
pp. 613
Appendix VII Tables for X-Ray Diffraction of Cubic Materials
pp. 617
Appendix VIII Resolution of X-Ray Measurements
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