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      Enhanced architectures for room-temperature reversible logic gates in graphene

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          Abstract

          We show that reversible two- and three-input logic gates, among which we mention the universal Toffoli gate, can be implemented with three tilted gating electrodes patterned on a monolayer graphene flake. These low-dissipation gates are based on the unique properties of ballistic charge carriers in graphene, which induce the appearance of bandgaps in transmission for properly potential barriers. The enhanced architectures for reversible logic gate implementations proposed in this paper offer a remarkable design simplification in comparison to standard approaches based on field-effect transistor circuits and a potential high-frequency operation.

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          Quantum Computation and Quantum Information

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            Micrometer-scale ballistic transport in encapsulated graphene at room temperature

            Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
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              Graphene

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                Author and article information

                Journal
                09 July 2014
                Article
                10.1063/1.4896140
                1407.2573
                1ef2737a-0bc6-4fee-8e07-a85a07cd83ba

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                cond-mat.mes-hall

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