Effect of arsenic implantation on electrical characteristics of LPCVD WSi/sub 2//n-Si Schottky contacts

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Journal

Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189383

Publication date (Print): Sept. 1991

Volume: 38

Issue: 9

Pages: 2033-2035

Article

DOI: 10.1109/16.83726

SO-VID: 86ff5478-d542-4568-83de-2cb9cd5184b6

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