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      Dangling-bond logic gates on a Si(100)-(2 × 1)–H surface

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          Abstract

          Atomic-scale Boolean logic gates (LGs) with two inputs and one output (i.e. OR, NOR, AND, NAND) were designed on a Si(100)-(2 × 1)-H surface and connected to the macroscopic scale by metallic nano-pads physisorbed on the Si(100)-(2 × 1)-H surface. The logic inputs are provided by saturating and unsaturating two surface Si dangling bonds, which can, for example, be achieved by adding and extracting two hydrogen atoms per input. Quantum circuit design rules together with semi-empirical elastic-scattering quantum chemistry transport calculations were used to determine the output current intensity of the proposed switches and LGs when they are interconnected to the metallic nano-pads by surface atomic-scale wires. Our calculations demonstrate that the proposed devices can reach ON/OFF ratios of up to 2000 for a running current in the 10 µA range.

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          Most cited references52

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          Molecular rectifiers

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            An Extended Hückel Theory. I. Hydrocarbons

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              Quantum Transport: Atom to Transistor

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                Author and article information

                Journal
                Journal of Physics: Condensed Matter
                J. Phys.: Condens. Matter
                IOP Publishing
                0953-8984
                1361-648X
                March 07 2012
                March 07 2012
                February 13 2012
                : 24
                : 9
                : 095011
                Article
                10.1088/0953-8984/24/9/095011
                22329961
                89c084e0-e960-4429-8188-dc2c70122dfc
                © 2012
                History

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