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      Vertical p–i–n Polysilicon Diode With Antifuse for Stackable Field-Programmable ROM

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          512-Mb PROM with a three-dimensional array of diode/antifuse memory cells

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            Polycrystalline silicon/CoSi2 Schottky diode with integrated SiO2 antifuse: a nonvolatile memory cell

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              A novel high-density low-cost diode programmable read only memory

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                Author and article information

                Journal
                IEEE Electron Device Letters
                IEEE Electron Device Lett.
                Institute of Electrical and Electronics Engineers (IEEE)
                0741-3106
                May 2004
                May 2004
                : 25
                : 5
                : 271-273
                Article
                10.1109/LED.2004.827287
                95645309-72ec-4e31-b90c-45161b890c48
                © 2004
                History

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