Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures.

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Abstract

We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

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Author and article information

Journal

Journal ID (iso-abbrev): ACS Nano

Title: ACS nano

Publisher: American Chemical Society (ACS)

ISSN (Electronic): 1936-086X

ISSN (Print): 1936-0851

Publication date (Electronic): Mar 22 2016

Volume: 10

Issue: 3

Affiliations

[1 ] National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.

[2 ] Hefei National Laboratory for Physical Sciences at the Microscale (HFNL) and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China.

[3 ] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.

[4 ] Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , Singapore 637371, Singapore.

[5 ] Department of Chemistry and Biochemistry, University of California , Los Angeles, California 90095, United States.

[6 ] Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, China.

Article

DOI: 10.1021/acsnano.6b00980

PubMed ID: 26950255

SO-VID: cec22afc-4e0f-46d8-9c55-b5dc4877fdf6

History

Keywords: van der Waals heterostructure,interlayer transition,type-II band alignment,MoS2,MoTe2

Data availability:

Keywords: van der Waals heterostructure, interlayer transition, type-II band alignment, MoS2, MoTe2

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