Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2-W continuous-wave operation at 735 nm

Tränkle, G.; Sumpf, B.; Beister, G.; Erbert, G.; Fricke, J.; Knauer, A.; Pittroff, W; Ressel, P.; Sebastian, J.; Wenzel, H

doi:10.1109/68.903203

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Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2-W continuous-wave operation at 735 nm

Author(s): B. Sumpf , G. Beister , G. Erbert , J. Fricke , A. Knauer , W. Pittroff , P. Ressel , J. Sebastian , H. Wenzel , G. Trankle

Publication date (Print): January 2001

Journal: IEEE Photonics Technology Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 12

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High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm

G. Erbert, F. Bugge, A. Knauer … (1999)

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High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes

N.G. Anderson, A. Baliga, H.K. Choi … (1995)

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Tensile-strained AlGaAsP and InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P quantum well laser diodes for TM-mode emission in the wavelength range 650

R.L. Thornton, K.J. Beernink, D.W. Treat … (1994)

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Author and article information

Journal

Title: IEEE Photonics Technology Letters

Abbreviated Title: IEEE Photon. Technol. Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 1041-1135

ISSN (Electronic): 1941-0174

Publication date Created: January 2001

Publication date (Print): January 2001

Volume: 13

Issue: 1

Pages: 7-9

Article

DOI: 10.1109/68.903203

SO-VID: e358c719-b21a-47ab-a478-4c5a696f30a7

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