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      Large Excitonic Reflectivity of Monolayer MoSe_{2} Encapsulated in Hexagonal Boron Nitride.

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          Abstract

          We demonstrate that a single layer of MoSe_{2} encapsulated by hexagonal boron nitride can act as an electrically switchable mirror at cryogenic temperatures, reflecting up to 85% of incident light at the excitonic resonance. This high reflectance is a direct consequence of the excellent coherence properties of excitons in this atomically thin semiconductor. We show that the MoSe_{2} monolayer exhibits power-and wavelength-dependent nonlinearities that stem from exciton-based lattice heating in the case of continuous-wave excitation and exciton-exciton interactions when fast, pulsed laser excitation is used.

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          Emerging photoluminescence in monolayer MoS2.

          Andrea Splendiani, Liang Sun, Yuanbo Zhang … (2010)
          Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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            Atomically thin MoS2: A new direct-gap semiconductor

            Tony F Heinz, Jie Shan, James Hone … (2010)
            The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.
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              Boron nitride substrates for high-quality graphene electronics

              P. Kim, C. Dean, J. Hone … (2010)
              Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.
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                Author and article information

                Journal
                Journal ID (iso-abbrev): Phys. Rev. Lett.
                Title: Physical review letters
                Publisher: American Physical Society (APS)
                ISSN (Electronic): 1079-7114
                ISSN (Print): 0031-9007
                Publication date (Electronic): Jan 19 2018
                Volume: 120
                Issue: 3
                Affiliations
                [1 ] Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
                [2 ] Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
                [3 ] National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
                Article
                DOI: 10.1103/PhysRevLett.120.037402
                PubMed ID: 29400519
                SO-VID: f32e5063-a507-43cc-9940-10f9c5bd1cc6
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